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SemiWell Semiconductor Bi-Directional Triode Thyristor
STF25A60
UL : E228720
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 25 A ) High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC )

2.T2

3.Gate
1.T1
TO-220F
General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 77 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25 225/250 260 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V C C g
Aug, 2003. Rev. 1
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
1/6
STF25A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -12.5 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 35 A, Inst. Measurement
Ratings Min.
0.2 6
Typ.
35
Max.
5.0 1.4 30 30 30 1.5 1.5 1.5 1.6
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
2/6
STF25A60
Fig 1. Gate Characteristics
10
3
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
10
2
TJ = 125 C
o
IGM (2A)
0
10
1
TJ = 25 C
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
Allowable Case Temperature [ oC]
35 30 130
Fig 4. On State Current vs. Allowable Case Temperature
Power Dissipation [W]

360
2
25 20 15 10 5 0
= 180 o = 150 o = 120 = 90 o = 60 = 30
o
o
120
110
: Conduction Angle
o
100

360
2
= 30
o o
90
80
: Conduction Angle
= 60 o = 90 o = 120 o = 150o = 180
15 20 25 30
0
5
10
15
20
25
30
0
5
10
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
280 240
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
200 160 120
60Hz
VGT (25 C)
VGT (t C)
o
o
1
50Hz
80 40 0 0 10
V V V
+ GT1 _ GT1 _ GT3
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STF25A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
I
GT3
IGT (25 C)
IGT (t C)
o
o
1
o
_
Transient Thermal Impedance [ C/W]
I I
+ GT1 _ GT1
1
0.1 -50
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V
A

RG
6V
A

RG
6V
A
V
V
V
RG
Test Procedure
Test Procedure
Test Procedure
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STF25A60
TO-220F Package Dimension
Dim. A B C D E F G H I J K L M N O
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
mm Typ.
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Inch Typ.
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 D 2 3 J K M
G
1. T1 2. T2 3. Gate
N O
5/6
STF25A60
TO-220F Package Dimension, Forming
Dim. A B C D E F G H I J K L M N O P
Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57
mm Typ.
Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101
Inch Typ.
Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 2 3 N J K O P M
G D
1. T1 2. T2 3. Gate
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